Unified Method for Behavioral Modeling of IGBT

نویسندگان

  • Tsvetana Grigorova Grigorova
  • Katya Konstantinova Asparuhova
چکیده

This paper presents a complete behavioral PSpice model for IGBT transistor. A voltage dependent capacitance is modeled using a second order polynomial and “arctan” function. The simulation results for I-V static and transfer characteristics and their comparisons with datasheets are shown. The dynamic model verification is carried out using PSpice simulations and experimental measurements of the circuits with active and inductive clamped loads.

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تاریخ انتشار 2014